期刊
OPTICS EXPRESS
卷 20, 期 11, 页码 12014-12020出版社
OPTICAL SOC AMER
DOI: 10.1364/OE.20.012014
关键词
-
类别
资金
- DARPA
- Air Force Office of Scientific Research
- Intel
There has been great interest in the silicon platform as a material system for integrated photonics. A key challenge is the development of a low-power, low drive voltage, broadband modulator. Drive voltages at or below 1 Vpp are desirable for compatibility with CMOS processes. Here we demonstrate a CMOS-compatible broadband traveling-wave modulator based on a reverse-biased pn junction. We demonstrate operation with a drive voltage of 0.63 Vpp at 20 Gb/s, a significant improvement in the state of the art, with an RF energy consumption of only 200 fJ/bit. (c) 2012 Optical Society of America
作者
我是这篇论文的作者
点击您的名字以认领此论文并将其添加到您的个人资料中。
推荐
暂无数据