期刊
OPTICS EXPRESS
卷 20, 期 20, 页码 22181-22187出版社
OPTICAL SOC AMER
DOI: 10.1364/OE.20.022181
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资金
- Royal Society
- Defense Science Technology Laboratory
- UK Engineering and Physics Research Council (EPSRC)
- Engineering and Physical Sciences Research Council [EP/J012904/1, EP/J017671/1] Funding Source: researchfish
- EPSRC [EP/J012904/1, EP/J017671/1] Funding Source: UKRI
We report the first room-temperature continuous-wave operation of III-V quantum-dot laser diodes monolithically grown on a Si substrate. Long-wavelength InAs/GaAs quantum-dot structures were fabricated on Ge-on-Si substrates. Room-temperature lasing at a wavelength of 1.28 mu m has been achieved with threshold current densities of 163 A/cm(2) and 64.3 A/cm(2) under continuous-wave and pulsed conditions for ridge-waveguide lasers with as cleaved facets, respectively. The value of 64.3 A/cm(2) represents the lowest room-temperature threshold current density for any kind of laser on Si to date. (C) 2012 Optical Society of America
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