4.6 Article

CMOS buried Quad p-n junction photodetector for multi-wavelength analysis

期刊

OPTICS EXPRESS
卷 20, 期 3, 页码 2053-2061

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OPTICAL SOC AMER
DOI: 10.1364/OE.20.002053

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  1. NanoQuebec
  2. Teledyne DALSA Semiconductor
  3. Natural Sciences and Engineering Research Council of Canada (NSERC)
  4. Laboratoire International Associe en Nanotechnologies et Nanosystemes [LIA-LN2]

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This paper presents a buried quad p-n junction (BQJ) photodetector fabricated with a HV (high-voltage) CMOS process. Multiple buried junction photodetectors are wavelength-sensitive devices developed for spectral analysis applications where a compact integrated solution is preferred over systems involving bulk optics or a spectrometer due to physical size limitations. The BQJ device presented here is designed for chip-based biochemical analyses using simultaneous fluorescence labeling of multiple analytes such as with advanced labs-on-chip or miniaturized photonics-based biosensors. Modeling and experimental measurements of the spectral response of the device are presented. A matrix-based method for estimating individual spectral components in a compound spectrum is described. The device and analysis method are validated via a test setup using individually modulated LEDs to simulate light from 4-component fluorescence emission. (C)2012 Optical Society of America.

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