期刊
OPTICS EXPRESS
卷 19, 期 21, 页码 20435-20443出版社
OPTICAL SOC AMER
DOI: 10.1364/OE.19.020435
关键词
-
类别
资金
- DARPA [HR0011-08-09-0001, W911NF-07-1-0529]
We report a high-speed ring modulator that fits many of the ideal qualities for optical interconnect in future exascale supercomputers. The device was fabricated in a 130nm SOI CMOS process, with 7.5 mu m ring radius. Its high-speed section, employing PN junction that works at carrier-depletion mode, enables 25Gb/s modulation and an extinction ratio >5dB with only 1V peak-to-peak driving. Its thermal tuning section allows the device to work in broad wavelength range, with a tuning efficiency of 0.19nm/mW. Based on microwave characterization and circuit modeling, the modulation energy is estimated similar to 7fJ/bit. The whole device fits in a compact 400 mu m(2) footprint. (C) 2011 Optical Society of America
作者
我是这篇论文的作者
点击您的名字以认领此论文并将其添加到您的个人资料中。
推荐
暂无数据