期刊
OPTICS EXPRESS
卷 19, 期 8, 页码 7062-7067出版社
OPTICAL SOC AMER
DOI: 10.1364/OE.19.007062
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资金
- Defense Advanced Research Projects Agency (DARPA) MTO office [HR0011-08-9-0001]
We demonstrate a compact waveguide-based high-speed Ge electro-absorption (EA) modulator integrated with a single mode 3 mu m silicon-on-isolator (SOI) waveguide. The Ge EA modulator is based on a horizontally-oriented p-i-n structure butt-coupled with a deep-etched silicon waveguide, which transitions adiabatically to a shallow-etched single mode large core SOI waveguide. The demonstrated device has a compact active region of 1.0 x 45 mu m(2), a total insertion loss of 2.5-5dB and an extinction ratio of 4-7.5dB over a wavelength range of 1610-1640nm with. -4V (pp) bias. The estimated Delta alpha/alpha value is in the range of 2-3.3. The 3dB bandwidth measurements show that the device is capable of operating at more than 30GHz. Clear eye-diagram openings at 12.5Gbps demonstrates large signal modulation at high transmission rate. (C) 2011 Optical Society of America
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