4.6 Article

Surface-plasmon mediated total absorption of light into silicon

期刊

OPTICS EXPRESS
卷 19, 期 21, 页码 20673-20680

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OPTICAL SOC AMER
DOI: 10.1364/OE.19.020673

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  1. UT System Texas Nanoelectronics
  2. State of Texas
  3. Texas Instruments Distinguished University Chair in Nanoelectronics endowment. Moreover
  4. National Research Foundation of Korea
  5. Korea Government (MEST) [20100000256]
  6. MKE/IITA, Korea [2008-F-022-01]
  7. Korea Evaluation Institute of Industrial Technology (KEIT) [KI001804] Funding Source: Korea Institute of Science & Technology Information (KISTI), National Science & Technology Information Service (NTIS)

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We report surface-plasmon mediated total absorption of light into a silicon substrate. For an Au grating on Si, we experimentally show that a surface-plasmon polariton (SPP) excited on the air/Au interface leads to total absorption with a rate nearly 10 times larger than the ohmic damping rate of collectively oscillating free electrons in the Au film. Rigorous numerical simulations show that the SPP resonantly enhances forward diffraction of light to multiple orders of lossy waves in the Si substrate with reflection and ohmic absorption in the Au film being negligible. The measured reflection and phase spectra reveal a quantitative relation between the peak absorbance and the associated reflection phase change, implying a resonant interference contribution to this effect. An analytic model of a dissipative quasi-bound resonator provides a general formula for the resonant absorbance-phase relation in excellent agreement with the experimental results. (C)2011 Optical Society of America

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