相关参考文献
注意：仅列出部分参考文献，下载原文获取全部文献信息。Improved germanium n+/p junction diodes formed by coimplantation of antimony and phosphorus
Jeehwan Kim et al.
APPLIED PHYSICS LETTERS (2011)
Strong enhancement of direct transition photoluminescence with highly tensile-strained Ge grown by molecular beam epitaxy
Yijie Huo et al.
APPLIED PHYSICS LETTERS (2011)
High n-Type Antimony Dopant Activation in Germanium Using Laser Annealing for n+/p Junction Diode
G. Thareja et al.
IEEE ELECTRON DEVICE LETTERS (2011)
Accounting for Interference, Scattering, and Electrode Absorption to Make Accurate Internal Quantum Efficiency Measurements in Organic and Other Thin Solar Cells
George F. Burkhard et al.
ADVANCED MATERIALS (2010)
Strain-enhanced photoluminescence from Ge direct transition
T. -H. Cheng et al.
APPLIED PHYSICS LETTERS (2010)
Control of direct band gap emission of bulk germanium by mechanical tensile strain
M. El Kurdi et al.
APPLIED PHYSICS LETTERS (2010)
Band structure and optical gain of tensile-strained germanium based on a 30 band k center dot p formalism
Moustafa El Kurdi et al.
JOURNAL OF APPLIED PHYSICS (2010)
Mid-infrared photonics in silicon and germanium
Richard Soref
NATURE PHOTONICS (2010)
Direct-bandgap luminescence at room-temperature from highly-strained Germanium nanocrystals
Latha Nataraj et al.
OPTICS EXPRESS (2010)
Enhanced direct bandgap emission in germanium by micromechanical strain engineering
Peng Huei Lim et al.
OPTICS EXPRESS (2009)
Room temperature 16 μm electroluminescence from Ge light emitting diode on Si substrate
Szu-Lin Cheng et al.
OPTICS EXPRESS (2009)
Room-temperature direct bandgap electroluminesence from Ge-on-Si light-emitting diodes
Xiaochen Sun et al.
OPTICS LETTERS (2009)
Growth of highly tensile-strained Ge on relaxed InxGa1-xAs by metalorganic chemical vapor deposition
Yu Bai et al.
JOURNAL OF APPLIED PHYSICS (2008)
Performance comparisons between carbon nanotubes, optical, and Cu for future high-performance on-chip interconnect applications
Kyung-Hoae Koo et al.
IEEE TRANSACTIONS ON ELECTRON DEVICES (2007)
Brillouin-zone unfolding of perfect supercells having nonequivalent primitive cells illustrated with a Si/Ge tight-binding parameterization
Timothy B. Boykin et al.
PHYSICAL REVIEW B (2007)
Strain-induced enhancement of near-infrared absorption in Ge epitaxial layers grown on Si substrate
Y Ishikawa et al.
JOURNAL OF APPLIED PHYSICS (2005)
Fabrication of high-quality p-MOSFET in Ge grown heteroepitaxially on Si
A Nayfeh et al.
IEEE ELECTRON DEVICE LETTERS (2005)
SiGeBiCMOS integrated circuits for high-speed serial communication links
DJ Friedman et al.
IBM JOURNAL OF RESEARCH AND DEVELOPMENT (2003)
Diagonal parameter shifts due to nearest-neighbor displacements in empirical tight-binding theory
TB Boykin et al.
PHYSICAL REVIEW B (2002)
Rationale and challenges for optical interconnects to electronic chips
DAB Miller
PROCEEDINGS OF THE IEEE (2000)
分享论文
