期刊
OPTICS EXPRESS
卷 19, 期 10, 页码 9968-9975出版社
OPTICAL SOC AMER
DOI: 10.1364/OE.19.009968
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资金
- Office of Naval Research under U.S. Navy [N00014-07-1-0819, N00014-09-1-1075]
- National Science Foundation [ECCS-1002340, ECCS-1002152]
- Div Of Electrical, Commun & Cyber Sys
- Directorate For Engineering [1002340, 1002152] Funding Source: National Science Foundation
We present a computational and experimental study of a novel terahertz (THz) device resulting from hybridization of metamaterials with pseudomorphic high electron mobility transistors (HEMTs), fabricated in a commercial gallium arsenide (GaAs) process. Monolithic integration of transistors into each unit cell permits modulation at the metamaterial resonant frequency of 0.46 THz. Characterization is performed using a THz time-domain spectrometer (THz-TDS) and we demonstrate switching values over 30%, and THz modulation at frequencies up to 10 megahertz (MHz). Our results demonstrate the viability of incorporating metamaterials into mature semiconductor technologies and establish a new path toward achieving electrically tunable THz devices. (C) 2011 Optical Society of America
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