Coherent and directional emission at 1.55 μm from PbSe colloidal quantum dot electroluminescent device on silicon

Coherent and directional emission at 1.55 mu m from a PbSe colloidal quantum dot electroluminescent device on silicon is demonstrated. The quantum dots are sandwiched between a metallic mirror and a distributed Bragg reflector and are chemically treated in order to increase the electronic coupling. Electrons and holes are injected through ZnO nanocrystals and indium tin oxide, respectively. The measured electroluminescence exhibits a minimum linewidth of similar to 3.1 nm corresponding to a cavity quality factor of similar to 500 at a low injection current density of 3 A/cm(2), and highly directional emission characteristics. (C) 2011 Optical Society of America