期刊
OPTICS EXPRESS
卷 19, 期 23, 页码 A1211-A1218出版社
OPTICAL SOC AMER
DOI: 10.1364/OE.19.0A1211
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资金
- Bureau of Energy, Ministry of Economic Affairs of Taiwan, ROC [99-D0204-6]
- National Science Council [NSC100-2112-M-006 -011 -MY3, 98-2221-E-218-005-MY3, 100-3113-E006-015]
Up-converted heterostructures with a Mn-doped GaN intermediate band photodetection layer and an InGaN/GaN multiple quantum well (MQW) luminescence layer grown by metal-organic vapor-phase epitaxy are demonstrated. The up-converters exhibit a significant up-converted photoluminescence (UPL) signal. Power-dependent UPL and spectral responses indicate that the UPL emission is due to photo-carrier injection from the Mn-doped GaN layer into InGaN/GaN MQWs. Photons convert from 2.54 to 2.99 eV via a single-photon absorption process to exhibit a linear up-conversion photon energy of similar to 450 meV without applying bias voltage. Therefore, the up-conversion process could be interpreted within the uncomplicated energy level model. (C) 2011 Optical Society of America
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