期刊
OPTICS EXPRESS
卷 18, 期 24, 页码 25241-25249出版社
OPTICAL SOC AMER
DOI: 10.1364/OE.18.025241
关键词
-
类别
资金
- Ministry of Education of the Czech Republic [LC 510, MSM0021620834]
- Charles University in Prague (GA UK) [17808, 73910, SVV-2010-26130]
- GAAV [IAA101120804]
- institutional Research Plan [AV0Z 10100521]
- KAN [400100701]
- EPSRC
- ONE
We present a study of ultrafast carrier transfer from highly luminescent states inside the core of silicon nanocrystal (due to quasidirect transitions) to states on the nanocrystal-matrix interface. This transfer leads to a sub-picosecond luminescence decay, which is followed by a slower decay component induced by carrier relaxation to lower interface states. We investigate the luminescence dynamics for two different surface passivation types and we propose a general model describing spectral dependence of ultrafast carrier dynamics. Our results stress the crucial role of the energy distribution of the interface states on surface-related quenching of quasidirect luminescence in silicon nanocrystals. We discuss how to avoid this quenching in order to bring the attractive properties of the quasidirect recombination closer to exploitation. (C) 2010 Optical Society of America
作者
我是这篇论文的作者
点击您的名字以认领此论文并将其添加到您的个人资料中。
推荐
暂无数据