期刊
OPTICS EXPRESS
卷 17, 期 25, 页码 22505-22513出版社
OPTICAL SOC AMER
DOI: 10.1364/OE.17.022505
关键词
-
类别
We have fabricated high-Q photonic crystal nanocavities with a lateral p-i-n structure to demonstrate low-power and high-speed electro-optic modulation in a silicon chip. GHz operation is demonstrated at a very low (mu W level) operating power, which is about 4.6 times lower than that reported for other cavities in silicon. This low-power operation is due to the small size and high-Q of the photonic crystal nanocavity. (C) 2009 Optical Society of America
作者
我是这篇论文的作者
点击您的名字以认领此论文并将其添加到您的个人资料中。
推荐
暂无数据