期刊
OPTICS EXPRESS
卷 17, 期 20, 页码 17227-17233出版社
OPTICAL SOC AMER
DOI: 10.1364/OE.17.017227
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- National Science Council (NSC) in Taiwan [NSC 98-2112-M-009-009-MY3]
- National Nanoscience and Nanotechnology Project [NSC 98-2120-M-007-009]
We report intense green photoluminescence (PL) from vertically aligned indium gallium nitride (InxGa1-xN) nanorod arrays. The formation of InxGa1-xN/GaN-heterostructure nanorods increases the localization depth of the radially confined carriers (> 100 meV). Temperature dependent PL peak energy of InGaN nanorods shows the characteristic S-shaped behavior, indicating the prominent carrier trapping in band-tail states associated with the nonuniformity of In content. Time-resolved PL (TRPL) response decays biexponentially and the dominant slow decay component of TRPL for InxGa1-xN nanorods is due to the transfer of excitons to the localized states before the radiative decay. (C) 2009 Optical Society of America
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