4.6 Article

Extremely low power optical bistability in silicon demonstrated using 1D photonic crystal nanocavity

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OPTICS EXPRESS
卷 17, 期 23, 页码 21108-21117

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OPTICAL SOC AMER
DOI: 10.1364/OE.17.021108

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  1. TT Basic Research Laboratories

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We demonstrate optical bistability in silicon using a high-Q (Q > 10(5))one-dimensional photonic crystal nanocavity at an extremely low 1.6 mu W input power that is one tenth the previously reported value. Owing to the device's unique geometrical structure, light and heat efficiently confine in a very small region, enabling strong thermo-optic confinement. We also showed with numerical analyses that this device can operate at a speed of similar to 0.5 mu s. (C) 2009 Optical Society of America

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