期刊
OPTICS EXPRESS
卷 17, 期 22, 页码 19933-19939出版社
OPTICAL SOC AMER
DOI: 10.1364/OE.17.019933
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资金
- Natural Sciences and Engineering Research Council of Canada [355628-08]
- Fonds de recherche sur la nature et les technologies [2009-NC-125840]
The authors report on the achievement of lasing in rolled-up semiconductor microtubes at room temperature, wherein self-organized InGaAs/GaAs quantum dots are incorporated as the gain medium. The freestanding quantum dot microtubes, with a diameter of similar to 5-6 mu m and wall thickness of similar to 100 nm, are formed when the coherently strained InGaAs/GaAs quantum dot heterostructure is selectively released from the GaAs substrate. The devices are characterized by an ultralow threshold (similar to 4 mu W) and a minimum intrinsic linewidth of similar to 0.2 - 0.3 nm at room temperature. The multiple lasing modes are analyzed using both the finite-difference time domain method and also a planar dielectric waveguide model. (C) 2009 Optical Society of America
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