High performance germanium photodetectors integrated on submicron silicon waveguides by low temperature wafer bonding

We demonstrate germanium photodetectors integrated on submicron silicon waveguides fabricated with a low temperature (<= 400 degrees C) wafer bonding and ion-cut process. The devices shows a low dark current of similar to 100 nA, a fiber accessed responsivity of > 0.4 A/W and an estimated quantum efficiency of above 90%. (C) 2008 Optical Society of America.