期刊
OPTICS COMMUNICATIONS
卷 285, 期 2, 页码 124-127出版社
ELSEVIER SCIENCE BV
DOI: 10.1016/j.optcom.2011.09.028
关键词
Erbium doped waveguide amplifier; Tantalum pentoxide; Optical amplifier; High index contrast; Integrated optics; Erbium
类别
We report a high index contrast erbium doped tantalum pentoxide waveguide amplifier. 23 cm long waveguides with erbium concentration of 2.7 x 10(20) cm(-3) were fabricated by magnetron sputtering of Er-doped tantalum pentoxide on oxidised silicon substrates and Ar-ion milling with photolithographically defined mask A net on-chip optical gain of similar to 2.25 dB/cm at 1531.5 nm was achieved with 20 mW of pump power at 977 nm launched into the waveguide. The pump threshold for transparency was 4.5 mW. (C) 2011 Elsevier B.V. All rights reserved.
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