期刊
OPTICS AND LASER TECHNOLOGY
卷 44, 期 7, 页码 2302-2305出版社
ELSEVIER SCI LTD
DOI: 10.1016/j.optlastec.2012.02.008
关键词
LEDs; Patterned sapphire substrate; Patterned ITO
资金
- National Natural Science Foundation of China [50835005]
- National Basic Research Project of China [2011CB013100]
To improve the light extraction efficiency of GaN-based light-emitting diodes (LEDs), periodic semisphere patterns with 3.5 mu m width, 1.2 mu m height, and 0.8 mu m spacing were formed on sapphire substrate by dry etching using BCl3/Cl-2 gas chemistry. The indium tin oxide (ITO) transparent conductive layer was patterned by wet etching to reduce the total internal reflection existing along between p-GaN, ITO, and air. At 350 mA injection current, the high power LED by integrating patterned sapphire substrate with patterned ITO technology exhibited a 36.9% higher light output power than the conventional LEDs. (c) 2012 Published by Elsevier Ltd.
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