期刊
OPTICAL MATERIALS
卷 37, 期 -, 页码 245-250出版社
ELSEVIER
DOI: 10.1016/j.optmat.2014.06.002
关键词
High-k gate dielectric; HfO2 thin films; Optical properties; Sputtering; Band gap
资金
- Anhui Provincial Natural Science Foundation [1208085MF99]
- National Key Project of Fundamental Research [2013CB632705]
- National Natural Science Foundation of China [51272001]
- Provincial Natural Science Foundation of Anhui Higher Education Institution of China [KJ2012A023]
- Key Project of Chinese Ministry of Education [212082]
- Outstanding Young Scientific Foundation of Anhui University [KJJQ1103]
- 211 project of Anhui University
High-k gate dielectric HfO2 thin films have been deposited on Si and quartz substrate by radio frequency magnetron sputtering. The structural and optical properties of HfO2 thin films related to deposition power are investigated by X-ray diffraction (XRD), fourier transform infrared spectroscopy (FTIR), atomic force microscopy (PPM), ultraviolet-visible spectroscopy (UV-Vis), and spectroscopic ellipsometry (SE). Results confirmed by XRD have shown that the as-deposited HfO2 thin films are not amorphous state but in monoclinic phase, regardless of deposition power. Analysis from FTIR indicates that an interfacial layer has been formed between the Si substrate and the HfO2 thin film during deposition. AFM measurements illustrate that the root mean square (RMS) of the as-deposited HfO2 thin films' surface demonstrates an apparent reduction with the increase of deposition. Combined with UV-Vis and SE measurements, it can be noted reduction in band gap with an increase in power has been observed. Additionally, increase in refractive index (n) has been confirmed by SE. (C) 2014 Elsevier B.V. All rights reserved.
作者
我是这篇论文的作者
点击您的名字以认领此论文并将其添加到您的个人资料中。
推荐
暂无数据