期刊
OPTICAL MATERIALS
卷 37, 期 -, 页码 165-174出版社
ELSEVIER
DOI: 10.1016/j.optmat.2014.05.018
关键词
Impurity; Defect level; Condensed matter; Photoluminescence; Theoretical calculation; Local symmetry
资金
- Estonian Science Foundation [7456, 6999, 6658, 7612, GLOFY054MJD]
- National Natural Science Foundation of China [11204393]
- European Social Fund's Doctoral Studies and Internationalisation Programme DoRa
- European Union through the European Regional Development Fund (Centre of Excellence Mesosystems: Theory and Applications) [TK114]
- NSF [ECCS-1200168]
- Jiang and Lin acknowledge the ATT Foundation
- Directorate For Engineering
- Div Of Electrical, Commun & Cyber Sys [1200168] Funding Source: National Science Foundation
Much effort has been put to achieve optoelectronic devices based on Er doped GaN, operating on the intra-4f-shell transitions of erbium. The key issue for good understanding of energy transfer mechanisms to Er and its luminescence properties is the position of Er3+ ions in the crystalline lattice of GaN. After doping, Er3+ ions are assumed to be placed in substitutional position for Ga3+ in GaN. Although Ga is positioned in high symmetry, tetrahedral [ErN4](9) - cluster, deviations from this after doping are impossible to avoid because of a large difference in ionic radii of Ga3+ (47 pm) and Er3+ (89 pm). In this work we report on crystal field analysis of Er ion energy levels in cubic and hexagonal GaN. It is shown that local symmetry of Er in cubic GaN is D-2, whereas calculations reveal that in hexagonal GaN local symmetry is C-3v. Some trends in crystal field parameters of trivalent lanthanides in hexagonal GaN are discussed. (C) 2014 Elsevier B.V. All rights reserved.
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