Cz grown 2-in. size Ce:Gd3(Al,Ga)5O12 single crystal; relationship between Al, Ga site occupancy and scintillation properties

2-in. size Ce 1%:Gd-3(Al1-xGax)(5)O-12 (GAGG) single crystals with various Ga concentration of x = 2, 2.4, 2.7 and 3 were grown by the Czochralski (Cz) method. Light yield has maximum value of 58,000 photon/MeV at x = 2.7 Ga concentration. Energy resolution was improved with decreasing Ga concentration and x = 2.4 sample showed best energy resolution of 4.2%@662 key. The dependence of scintillation properties on crystal structure and Al-Ga was discussed. (C) 2014 Elsevier B.V. All rights reserved.