期刊
OPTICAL MATERIALS
卷 31, 期 2, 页码 237-240出版社
ELSEVIER
DOI: 10.1016/j.optmat.2008.03.015
关键词
Nanostructure; Crystal structure; Chemical vapor deposition; Photoluminescence
资金
- National Natural Science Foundation of China [50572095, 50772099, 2006CB604906]
- Zhejiang Provincial Natural Science Foundation of China [Y407183]
Ga-doped zinc oxide (ZnO) nanorods were prepared by simply evaporating the mixture of Zn powders and Ga droplets. The obtained quasi-aligned nanorods are about 150 nm in diameter and 1.5 mu m in length. X-ray diffraction pattern shows only the diffraction peaks from wurtzite ZnO without secondary phase, and X-ray photoelectron spectroscopy shows the content of Ga in ZnO nanorods as high as about 0.9 at.%. Photoluminescence measurement shows a donor-bound exciton ((DX)-X-0) emission which is considerably broad even at low temperature due to the incorporation of Ga. However, it can be speculated from the photoluminescence that only a part of the incorporated Ga substitute Zn sites and act as donors. (C) 2008 Elsevier B.V. All rights reserved.
作者
我是这篇论文的作者
点击您的名字以认领此论文并将其添加到您的个人资料中。
推荐
暂无数据