期刊
OPTICAL ENGINEERING
卷 53, 期 8, 页码 -出版社
SPIE-SOC PHOTO-OPTICAL INSTRUMENTATION ENGINEERS
DOI: 10.1117/1.OE.53.8.087108
关键词
ZnO; mobility; carrier concentration; x-ray reflectance; x-ray photoelectron spectroscopy
类别
资金
- AFOSR [FA9550-10-1-0079]
- NSF [DMR-080-3276]
- DOE [DE-FG02-07ER46389]
- AFRL [HC1047-05-D-4005]
Ga-doped ZnO films of thicknesses 3 to 500 nm were grown on Si at 200 degrees C by pulsed-laser deposition in 10 mTorr of Ar. Sheet carrier concentration n(s) and mobility were measured at room temperature by the Hall effect and were fitted, respectively, to the equations n(s)(d) = n(infinity) (d - delta d) and mu(d) = mu(infinity)/[1 + d* / (d - delta d)], where n(infinity) is the predicted volume carrier concentration at d - infinity (the bulk value), dd is the thickness of the dead layer (if any), mu(infinity) is the predicted mobility at d - infinity, and d* is a figure of merit for the electrical properties of the interface. The fitted values of d* and delta d were similar to 23 and similar to 11 nm, respectively. X-ray reflectance results were consistent with an similar to 3-nm-thick interfacial layer of significantly lower density than that of bulk ZnO. X-ray photoelectron spectroscopy measurements showed an similar to 10-nm-thick interfacial region in which the Ga peaks at similar to 3.8%, well above the average value of 2.4% found in the bulk of the film. (C) 2014 Society of Photo-Optical Instrumentation Engineers (SPIE)
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