期刊
SYNTHETIC METALS
卷 210, 期 -, 页码 109-122出版社
ELSEVIER SCIENCE SA
DOI: 10.1016/j.synthmet.2015.07.010
关键词
Graphene nanoribbon; Synthesis; Electronic property; Charge transport; Device applications
资金
- National Key Basic Research Program of China [2013CBA01604, 2015CB921600]
- National Natural Science Foundation of China [61325020, 11274154, 61261160499]
- National Science and Technology Major Project [2011ZX02707]
- Natural Science Foundation of Jiangsu Province [BK2012302]
- Specialized Research Fund for the Doctoral Program of Higher Education [20120091110028]
- Priority Academic Program Development of Jiangsu Higher Education Institutions
Graphene is a promising material for high-performance electronics owing to its exotic electronic structure and high mobility. However, the lack of a band gap poses an obstacle to the realization of device applications. The challenge of creating a band gap in graphene has stimulated extensive research on graphene nanoribbons. Over the past few years, atomic precision synthesis, ballistic charge transport, and high on/off ratio logic transistors have been successfully demonstrated in graphene nanoribbons. In this article, we review this subject with a special focus on material synthesis, charge transport and device applications. We will see that the transport properties and device performances depend highly on the quality of the materials and their synthesis methods. We also stress the importance of making high-quality narrow graphene nanoribbon materials for both fundamental research and electronic applications. Scalable synthesis and processing remain a long-term goal in graphene nanoribbon research for any real applications. (C) 2015 Elsevier B.V. All rights reserved.
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