期刊
SYNTHETIC METALS
卷 209, 期 -, 页码 178-182出版社
ELSEVIER SCIENCE SA
DOI: 10.1016/j.synthmet.2015.07.018
关键词
Organic thin film transistors; Encapsulation; Ion implantation; Ambient stability
资金
- National Nuclear Security Administration of the U.S. Department of Energy [DE-AC52-06NA25396]
- European Commission [611070]
Long-term stability of devices based on organic materials is still impeding the diffusion of these structures in real applications. In this paper we have investigated the effects of low energy, combined, ion implantation (N and Ne) in the evolution of the electrical performances of pentacene-based Organic Thin Film Transistors (OTFTs) over time by means of current-voltage and photocurrent spectroscopy analyses. We have demonstrated that the selected combination of ions allows reducing the degradation of charge carriers mobility, and also stabilization of the devices threshold voltage over a long time (over 2000 h). (c) 2015 Elsevier B.V. All rights reserved.
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