4.5 Article

Self-encapsulation of organic thin film transistors by means of ion implantation

期刊

SYNTHETIC METALS
卷 209, 期 -, 页码 178-182

出版社

ELSEVIER SCIENCE SA
DOI: 10.1016/j.synthmet.2015.07.018

关键词

Organic thin film transistors; Encapsulation; Ion implantation; Ambient stability

资金

  1. National Nuclear Security Administration of the U.S. Department of Energy [DE-AC52-06NA25396]
  2. European Commission [611070]

向作者/读者索取更多资源

Long-term stability of devices based on organic materials is still impeding the diffusion of these structures in real applications. In this paper we have investigated the effects of low energy, combined, ion implantation (N and Ne) in the evolution of the electrical performances of pentacene-based Organic Thin Film Transistors (OTFTs) over time by means of current-voltage and photocurrent spectroscopy analyses. We have demonstrated that the selected combination of ions allows reducing the degradation of charge carriers mobility, and also stabilization of the devices threshold voltage over a long time (over 2000 h). (c) 2015 Elsevier B.V. All rights reserved.

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