期刊
SYNTHETIC METALS
卷 203, 期 -, 页码 187-191出版社
ELSEVIER SCIENCE SA
DOI: 10.1016/j.synthmet.2015.02.036
关键词
Charge selective CELIV; Specific mobility; Organic semiconductors
资金
- 973 Program [2014CB643506]
- Natural Science Foundation of China [21221063]
- University of Groningen
We report on the realization of charge selective CELIV (charge extraction by linearly increasing voltage) via the selective extraction of each charge carrier species in a SiO2 inserted MIS (metal-insulatorsemiconductor) structure. The experiments are performed in a typical active layer of P3HT (poly (3-hexylthiophene)):PCBM (phenyl C-61-butyric acid methyl ester) with a composition ratio of 1:1. The presence of double CELIV peaks indicates the involvement of deep trap states in the charge transport process. Furthermore the difference in excitation intensity dependence between photo-excited holes and electrons suggests a difference in population probabilities of electrons and holes for shallow and deep trap states. Charge selective CELIV experiments also show that the simultaneous extraction of holes and electrons is not a simple linear superposition of the cases where they are extracted separately, indicating that a fraction of photo-excited charges populating shallow trap states can escape from the device. (C) 2015 Elsevier B.V. All rights reserved.
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