期刊
NUMERICAL HEAT TRANSFER PART B-FUNDAMENTALS
卷 61, 期 2, 页码 71-90出版社
TAYLOR & FRANCIS INC
DOI: 10.1080/10407790.2012.646170
关键词
-
资金
- Purdue's PRISM Center under U.S. Department of Energy [DE-FC52-08NA28617]
- Purdue's Frederick N. Andrews Fellowship
Creep is a critical physical mechanism responsible for the failure of radio-frequency (RF) capacitive micro-electro-mechanical systems (MEMS) switches, especially those operating at high RF power. Accurate modeling of creep in RF MEMS metallic membranes is necessary to estimate device lifetime and to improve their reliability. Moreover, the devices are frequently very thin, with aspect ratios as high as 1: 500, and conventional three-dimensional structural modeling is onerous and unnecessary. In this article we extend a cell-centered finite-volume approach, previously developed to model thin membranes using Mindlin-Reissner plate theory, to study creep in RF MEMS devices. Results show that the present methodology can accurately predict the long-term creep behavior in thin RF MEMS devices in a computationally efficient manner.
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