期刊
出版社
ELSEVIER
DOI: 10.1016/j.nimb.2012.12.078
关键词
PbSe; Lead selenide; Ion implanation; Electron beam annealing; Silicon dioxide; Photoluminescence; Infrared
Nanocrystals of PbSe have been fabricated in a silicon dioxide matrix by sequential low energy ion implantation followed by an electron beam annealing step. Transmission electron microscopy reveals PbSe nanocrystals with typical sizes between 3 and 10 nm in the sub-surface region. Rutherford Backscattering Spectrometry has been used to study the total atomic retention, as a function of implanted atoms, following annealing. Photoluminescence was observed in various samples, at 4 K, as a broad peak between 1.4 and 2.0 mu m, with observation of a dependence of the peak wavelength on annealing temperature. Room temperature photoluminescence was observed for samples with a high retention of implanted atoms, demonstrating the importance of nanocrystal density for achieving ambient temperature emission in these systems. (C) 2013 Elsevier B.V. All rights reserved.
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