期刊
NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS
卷 268, 期 11-12, 页码 1718-1722出版社
ELSEVIER SCIENCE BV
DOI: 10.1016/j.nimb.2010.02.046
关键词
Rutherford backscattering; Ion channeling; Monte Carlo simulations; GaN epitaxial layers; Ion bombardment; Extended defects
A Monte Carlo code for simulations of ion channeling in crystals containing extended defects has been developed. A bent channel model of lattice distortions produced by dislocations has been used for defect analysis in ion implanted GaN. To test the code, the energy dependence of the dechanneling parameter has been calculated for crystals containing randomly displaced atoms and bent channels. It follows the 1/E and E(1/2) dependence, respectively. (C) 2010 Elsevier B.V. All rights reserved.
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