期刊
出版社
ELSEVIER
DOI: 10.1016/j.nimb.2007.12.049
关键词
ion implantation; silicon carbide; channelling; extended defects; dynamic annealing; damage accumulation
Silicon carbide offers unique applications as a wide bandgap semiconductor. This paper reviews various aspects of ion implantation in 4H-SiC studied with a view to optimise ion implantation in silicon carbide. Al, P and Si ions with keV energies were used. Channelling effects were studied in both a-axis and c-axis crystals as a function of tilts along major orthogonal planes and off the major orthogonal planes. Major axes such as [0 0 0 1] and the [ 1 1 (2) over bar 0] and minor axis like the [1 1 (2) over bar 3] showed long channelling tails and optimum tilts for minimising channelling are recommended. TEM analyses of the samples showed the formation of (0 0 0 1) prismatic loops and the (1 1 (2) over bar 0) loops as well,in both a and c-cut crystals. We also note the presence of voids only in P implanted samples implanted with amorphising doses. The competing process between damage accumulation and dynamic annealing was studied by determining the critical temperature for the transition between crystalline and amorphous SiC and an activation energy of 1.3 eV is extracted. (C) 2007 Elsevier B.V. All rights reserved.
作者
我是这篇论文的作者
点击您的名字以认领此论文并将其添加到您的个人资料中。
推荐
暂无数据