期刊
出版社
ELSEVIER
DOI: 10.1016/j.nima.2011.01.093
关键词
Lead iodide; Pbl(2); Semiconductor film; Detector; X-ray
类别
资金
- FAPESP
- CAPES
- CNPq
Some semiconductor materials such as lead iodide (Pbl(2)) have applications in the detection of ionizing radiation at room temperature using the direct detection method. In this work we investigate lead iodide films deposited by thermal evaporation. The morphology, structure, and electric properties were investigated as a function of deposition height, i.e. the distance between evaporation-boat and substrates. The results show a morphology of vertical leaves and X-ray diffraction shows just one preferential orientation along the direction 110. Energy dispersive spectroscopy reveals that the films are not stoichiometric, with excess iodine atoms. Electrical resistivity of about 10(8) Omega cm was measured. This is smaller than for the bulk due to structural defects. The values of activation energy for electric transport increase from 0.52 up to 1.1 eV with decreasing deposition height, what indicates that the best film is the one deposited at the shortest distance. Exposure under X-ray mammographic energy shows a linear behavior up to 500 mR. No variation in sensibility was observed between 22 and 30 kVp. (C) 2011 Elsevier B.V. All rights reserved.
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