Study of wide band gap nanocrystalline silicon carbide films for radiation imaging detectors

Nanocrystalline silicon carbide (nc-SiC) was deposited by plasma enhanced chemical vapour deposition method. The source gases were silane and methane. The concentration of species in the SiC films was determined by Rutherford backscattering spectrometry (RBS). Chemical compositions were analyzed by infrared spectroscopy. The hydrogen concentration was determined by the elastic recoil detection (ERD) method. Film morphology was assessed by atomic force microscopy. Irradiation of samples by fast neutrons in IREN facility at JINR Dubna was used for radiation hardness investigation. The electrical properties of nc-SiC:H films were determined by I-V and C-V measurement. The properties of nc-SiC:H films are discussed based on the obtained results. (C) 2010 Elsevier B.V. All rights reserved.