期刊
SURFACE SCIENCE
卷 635, 期 -, 页码 49-54出版社
ELSEVIER SCIENCE BV
DOI: 10.1016/j.susc.2014.12.006
关键词
Silicon oxidation; X-ray radiation; Thin oxide measurement; Oxidation model
资金
- Defense Threat Reduction Agency (DTRA) [HDTRA1-10-1-0041]
Surface effects on silicon wafers irradiated by 10 keV x-rays at room temperature were characterized using x-ray photoelectron spectroscopy and spectroscopic ellipsometry. The samples were exposed to total ionizing doses ranging from 1.0 to 12 Mrad(SiO2) at x-ray dose rates ranging from 5.8 krad(SiO2)/min to 67 krad(SiO2)/min. Accelerated thin oxide growth on irradiated samples compared to natural native oxide growth under room temperature conditions was demonstrated, and the composition of the irradiation-accelerated oxide was investigated. The presence of suboxides along with silicon dioxide was confirmed on the irradiated silicon sample. Two thin oxide growth models were applied to characterize the enhanced oxidation rate observed for irradiated wafers. (C) 2014 Elsevier B.V. All rights reserved.
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