期刊
SUPERLATTICES AND MICROSTRUCTURES
卷 83, 期 -, 页码 719-729出版社
ACADEMIC PRESS LTD- ELSEVIER SCIENCE LTD
DOI: 10.1016/j.spmi.2015.03.062
关键词
ZnO; Atomic layer deposition; Annealing temperature; Film thickness; X-ray diffraction; Photoluminescence
资金
- National Natural Science Foundation of China [50902028]
- Natural Science Foundation of Guangdong Province [9451805707003351]
- Weapon & Equipment Pre-research Foundation of General Armament Department [9140A12050213HT01175]
- Shenzhen Science and Technology Plan Supported Project [JCYJ20140616172915497]
- College Training Plan of Excellent Young Teachers in Guangdong Province [Yq2013193]
In this paper, ZnO thin films with different thicknesses grown on Si (100) substrates by atomic layer deposition (ALD) method were annealed in nitrogen at the temperatures ranging from 200 to 900 degrees C. The influences of film thickness and annealing temperature on the structural and optical properties of the ZnO films were systematically investigated by XRD, SEM and RT-PL All the ALD-ZnO thin films show polycrystalline hexagonal wurtzite structure and a high preferential c-axis orientation. The results show that the crystallinity quality and luminescence performance are both improved by increasing the film thickness. In addition, the loss of oxygen which results in the formation of oxygen vacancies (V-O) is the main reason for the green emission dominating visible band of annealed ZnO thin films. The visible band is dominated by different kinds of defects including oxygen vacancies (V-O and V-O(+)), and interstitial oxygen (I-O) with increasing annealing temperature. High-quality ZnO thin films with good luminescence performance can be obtained for the films annealed at 800 degrees C in nitrogen. (C) 2015 Elsevier Ltd. All rights reserved.
作者
我是这篇论文的作者
点击您的名字以认领此论文并将其添加到您的个人资料中。
推荐
暂无数据