期刊
SUPERLATTICES AND MICROSTRUCTURES
卷 79, 期 -, 页码 45-53出版社
ACADEMIC PRESS LTD- ELSEVIER SCIENCE LTD
DOI: 10.1016/j.spmi.2014.12.019
关键词
Negative differential resistance; Porous silicon devices; Telegraphic noise; Coulomb repulsion
资金
- CONICET
- ANPCyT [0135]
We report a voltage controlled negative differential resistance (NDR) effect at room temperature in two types of devices based on porous silicon (PS): thermally oxidized porous silicon multilayer with Ag electrodes in a sandwich configuration (Ag/c-Si/PS/Ag) and porous silicon single layer with Al electrodes in a coplanar configuration (Al/PS/Al). The NDR effect was observed in current-voltage characteristics and showed telegraphic noise. The NDR effects showed a strong dependence with temperature and with the surrounding atmospheric air pressure. The NDR occurrence was attributed to the blocking of conduction channels due to carrier trapping phenomena. We also experimentally demonstrate porous silicon devices exploiting the NDR effect, with potential applications as volatile memory devices. (C) 2014 Elsevier Ltd. All rights reserved.
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