期刊
SUPERLATTICES AND MICROSTRUCTURES
卷 84, 期 -, 页码 72-79出版社
ACADEMIC PRESS LTD- ELSEVIER SCIENCE LTD
DOI: 10.1016/j.spmi.2015.03.067
关键词
InGaN quantum dots; GaN pyramid; Critical diameter
资金
- National Natural Science Foundation of China [61275201, 61372037]
- Program for New Century Excellent Talents in University of Ministry of Education of China [NCET-10-0261]
- Fund of State Key Laboratory of Information Photonics and Optical Communications (Beijing University of Posts and Telecommunications), P.R. China
- Fundamental Research Funds for the Central Universities of Ministry of Education of China [2011RC0402]
- Research Fund for the Doctoral Program of Higher Education of China [20100005110013]
- Opened Fund of the State Key Laboratory on Integrated Optoelectronics, Institute of Semiconductors, Chinese Academy of Sciences
An equilibrium approach is used to calculate the free energy and composition distribution of InGaN/GaN quantum dot located on the InGaN/GaN pyramid. The energy balance method is adopted to predict critical conditions for quantum dot formation. We find that the formation of QD depends strongly on the size of pyramid top surface. The results can fit our experiment qualitatively. (C) 2015 Elsevier Ltd. All rights reserved.
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