4.6 Article

High-field terahertz response of graphene

期刊

NEW JOURNAL OF PHYSICS
卷 15, 期 -, 页码 -

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IOP PUBLISHING LTD
DOI: 10.1088/1367-2630/15/8/085019

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资金

  1. NSF-MRSEC [DMR-0820382]
  2. National Science Foundation [DMR-1063632]
  3. National Research Foundation of Korea [NRF-2011-220-D00052]
  4. National Research Foundation of Korea (NRF)
  5. Korean government [NRF-2011-220-D00052, 2011-0013255]
  6. Division Of Materials Research
  7. Direct For Mathematical & Physical Scien [1063632] Funding Source: National Science Foundation
  8. National Research Foundation of Korea [2011-0013255, 220-2011-1-D00052] Funding Source: Korea Institute of Science & Technology Information (KISTI), National Science & Technology Information Service (NTIS)

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We investigate the response of multi-layer epitaxial graphene and chemical vapor deposition (CVD)-grown single-layer graphene to strong terahertz (THz) fields. Contrary to theoretical predictions of strong nonlinear response, the transmitted fields exhibit no harmonic generation, indicating that the nonlinear response is limited by fast electron thermalization due to carrier-carrier scattering. The fast electron heating gives rise to large THz transmission enhancement (>15%) in single-layer CVD graphene at high THz fields (E-THz > 10 kV cm(-1)). The nonlinear effects exhibit non-Drude behavior in the THz conductivity, where THz fields induce extreme non-equilibrium electron distributions.

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