4.6 Article

Engineering a topological phase transition in β-InSe via strain

期刊

NEW JOURNAL OF PHYSICS
卷 15, 期 -, 页码 -

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IOP PUBLISHING LTD
DOI: 10.1088/1367-2630/15/7/073008

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资金

  1. National Basic Research Program of China (973 program) [2013CB632401]
  2. National Science foundation of China [11174180]
  3. Fund for Doctoral Program of National Education [20120131110066]
  4. Natural Science Foundation of Shandong Province [ZR2011AM009]
  5. Ministry of Education Academic Award for Postgraduates

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We report that beta-InSe endowed with external strain realizes a novel three dimensional topological insulator (TI) by ab initio calculations. We predicate that the promising topological non-trivial state can be observed in an accessible temperature regime in beta-InSe for its large spin-orbital band gap up to 121 meV. Specifically, unlike in previous literature where the band inversion (BI) in TIs is induced using heavy elements that have strong spin-orbital coupling (SOC), we provide a remarkable blueprint for stabilizing BI solely by mechanical deformation so that beta-InSe could display BI even without considering SOC. Nevertheless, SOC is still needed to create a band gap at the crossing point by breaking the incompatibility symmetry of the inverted bands.X

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