4.6 Article

Ultrafast dynamics of occupied quantum well states in Pb/Si(111)

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NEW JOURNAL OF PHYSICS
卷 14, 期 -, 页码 -

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IOP PUBLISHING LTD
DOI: 10.1088/1367-2630/14/2/023047

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  1. Deutsche Forschungemeinschaft [BO 1823/2, SFB 616]
  2. International Max-Planck Research School 'Complex Surfaces in Material Science'
  3. Alexander von Humboldt Foundation via a Lynen Stipend

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We investigate the ultrafast electron dynamics of occupied quantum well states (QWSs) in Pb/Si(111) with time-resolved photoemission spectroscopy. We find an ultrafast increase in binding energy of the QWSs driven by the optical excitation, while the electronic system is in a non-equilibrium state. We explain this transient energetic stabilization in the photoexcited state by an ultrafast modification of the Fermi level pinning, triggered by charge transfer across the Pb/Si interface. In addition, we observe the excitation of a coherent surface phonon mode at a frequency of similar to 2 THz, which modulates the QWS binding energy.

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