期刊
NEW JOURNAL OF PHYSICS
卷 13, 期 -, 页码 -出版社
IOP PUBLISHING LTD
DOI: 10.1088/1367-2630/13/7/073037
关键词
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资金
- DOD-ARO [0402-17291]
- NSF [DMR-0747808]
- Division Of Materials Research
- Direct For Mathematical & Physical Scien [GRANTS:13678848, 0747808] Funding Source: National Science Foundation
We explore the electrical transport and magneto-conductance (MC) in quasi-two-dimensional strongly correlated ultra-thin films of LaNiO3 (LNO) to investigate the effect of hetero-epitaxial strain on electron-electron and electron-lattice interactions from the low to intermediate temperature range (2-170 K). The fully epitaxial 10 unit cell thick films spanning tensile strain up to similar to 4% are used to investigate the effects of enhanced carrier localization driven by a combination of weak localization (WL) and electron-electron interactions at low temperatures. The MC data show the importance of the increased contribution of WL to low-temperature quantum corrections. The obtained results demonstrate that with increasing tensile strain and reduced temperature, the quantum-confined LNO system gradually evolves from the Mott into the Mott-Anderson regime.
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