期刊
NEW JOURNAL OF PHYSICS
卷 12, 期 -, 页码 -出版社
IOP PUBLISHING LTD
DOI: 10.1088/1367-2630/12/7/073013
关键词
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资金
- European Community [217257]
- EPSRC
- UK Department for Business, Innovation and Skills
- Toshiba Research Europe Ltd.
- Engineering and Physical Sciences Research Council [EP/D008506/1] Funding Source: researchfish
- EPSRC [EP/D008506/1] Funding Source: UKRI
Using standard microfabrication techniques, it is now possible to construct devices that appear to reliably manipulate electrons one at a time. These devices have potential use as building blocks in quantum computing devices, or as a standard of electrical current derived only from a frequency and the fundamental charge. To date, the error rate in semiconductor 'tuneable-barrier' pump devices, those which show most promise for high-frequency operation, have not been tested in detail. We present high-accuracy measurements of the current from an etched GaAs quantum dot pump, operated at zero source-drain bias voltage with a single ac-modulated gate at 340 MHz driving the pump cycle. By comparison with a reference current derived from primary standards, we show that the electron transfer accuracy is better than 15 parts per million. High-resolution studies of the dependence of the pump current on the quantum dot tuning parameters also reveal possible deviations from a model used to describe the pumping cycle.
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