Electrostatic transfer of patterned epitaxial graphene from SiC(000(1)over-bar) to glass

We report on a scalable electrostatic process to transfer epitaxial graphene onto alkali-containing glass substrates. Multilayer epitaxial graphene (MEG) was grown by heating silicon carbide (000 (1) over bar) to high temperatures (1650-1700 degrees C) in an argon-mediated environment. Optical lithography was used to define patterned graphene regions, typically 20 x 20 mu m(2), which were then transferred to Pyrex substrates. For the electrostatic transfer, a large electric potential (1.2 kV) was applied between the donor MEG sample (anode) and the heated acceptor glass substrate (cathode). Atomic force microscopy scans of the transferred graphene showed that the morphology of the transferred multilayer graphene resembles that of the donor MEG. Raman spectroscopy analysis confirmed that the graphene can be transferred without inducing defects. The sheet resistance of the transferred graphene was as low as 150 Omega/square. The transfer of small (1-2 mu m wide) and large (similar to 70 x 70 mu m(2)) graphene patterns to Zerodur demonstrates the versatility of this transfer technique.