4.8 Article

Extent of voltage sensor movement during gating of Shaker K+ channels

期刊

NEURON
卷 59, 期 1, 页码 98-109

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CELL PRESS
DOI: 10.1016/j.neuron.2008.05.006

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  1. NIGMS NIH HHS [R01 GM074770-02, R01 GM074770-01, GM074770, R01 GM074770-03, R01 GM074770] Funding Source: Medline

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Voltage-driven activation of Kv channels results from conformational changes of four voltage sensor domains (VSDs) that surround the K+ selective pore domain. How the VSD helices rearrange during gating is an area of active research. Luminescence resonance energy transfer (LRET) is a powerful spectroscopic ruler uniquely suitable for addressing the conformational trajectory of these helices. Using a geometric analysis of numerous LRET measurements, we were able to estimate LRET probe positions relative to existing structural models. The experimental movement of helix S4 does not support a large 15-20 angstrom transmembrane paddle-type movement or a near-zero A vertical transporter-type model. Rather, our measurements demonstrate a moderate S4 displacement of 10 +/- 5 angstrom, with a vertical component of 5 +/- 2 angstrom. The S3 segment moves 2 +/- 1 angstrom in the opposite direction and is therefore not moving as an S3-S4 rigid body.

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