Formation and characterization of Ni/Al Ohmic contact on n+-type GeSn

In this study, a Ni/Al Ohmic contact on a highly doped n-type GeSn has been investigated. A specific contact resistivity as low as (2.26 +/- 0.11) x 10(-4) Omega cm(2) was obtained with the GeSn sample annealed at a temperature of 450 degrees C for 30 s. The linear Ohmic behavior was attributed to the low resistance of the Ni(GeSn) phase; this behavior was determined using glancing-angle X-ray diffraction, and the quantum tunneling current through the Schottky barrier narrowed because of high doping; this phenomenon was confirmed from the contact resistance characteristics at different temperatures from 45 to 205 K. (C) 2015 Elsevier Ltd. All rights reserved.