期刊
SOLAR ENERGY MATERIALS AND SOLAR CELLS
卷 141, 期 -, 页码 322-330出版社
ELSEVIER SCIENCE BV
DOI: 10.1016/j.solmat.2015.06.004
关键词
Pulsed laser deposition; Molecular beam epitaxy; Optical properties; Intermediate band solar cell; Doping and alloying; Transition-metal-doped semiconductor
资金
- Research Council of Norway [203503]
- The Norwegian Center for Solar Cell Technology, a Center for Environment-Friendly Energy Research - Norwegian Research Council and Research and Industry in Norway [193829]
We have investigated the structural and optical properties of Cr-doped ZnS (ZnS:Cr) thin films (0-7.5 at.% Cr) for use in intermediate band solar cells. The films were grown on Si(100) in molecular beam epitaxy (MBE) and pulsed laser deposition (PLD) equipments. Introducing Cr into ZnS resulted in Cr related sub-bandgap absorption, but also reduced the grain size. The sub-bandgap absorption increased with increasing Cr content, and with increasing growth temperature, but did not depend on the growth method. In contrast, the crystallinity depended strongly on the growth method, and smoother and highly textured films were obtained by PLO. The data indicate that stacking faults are present in all films. (C) 2015 Elsevier B.V. All rights reserved.
作者
我是这篇论文的作者
点击您的名字以认领此论文并将其添加到您的个人资料中。
推荐
暂无数据