期刊
SMALL
卷 11, 期 29, 页码 3591-3596出版社
WILEY-V C H VERLAG GMBH
DOI: 10.1002/smll.201403288
关键词
electrolyte gating; ink-jet printing; oxide semiconductors; printed electronics
类别
资金
- Helmholtz Gemeinschaft in the form of Helmholtz Virtual Institute [VI-530]
- State of Hesse
Complementary metal oxide semiconductor (CMOS) technology with high transconductance and signal gain is mandatory for practicable digital/analog logic electronics. However, high performance all-oxide CMOS logics are scarcely reported in the literature; specifically, not at all for solution-processed/printed transistors. As a major step toward solution-processed all-oxide electronics, here it is shown that using a highly efficient electrolyte-gating approach one can obtain printed and low-voltage operated oxide CMOS logics with high signal gain (approximate to 21 at a supply voltage of only 1.5 V) and low static power dissipation.
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