期刊
SMALL
卷 11, 期 18, 页码 2209-2216出版社
WILEY-V C H VERLAG GMBH
DOI: 10.1002/smll.201402900
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资金
- Nano Area of Advance program at Chalmers University of technology
- EU FP7 Marie Curie Career Integration grant
- Swedish Research Council
Black phosphorus (BP) has been recently unveiled as a promising 2D direct bandgap semiconducting material. Here, ambipolar field-effect transistor behavior of nanolayers of BP with ferromagnetic tunnel contacts is reported. Using TiO2/Co contacts, a reduced Schottky barrier < 50 meV, which can be tuned further by the gate voltage, is obtained. Eminently, a good transistor performance is achieved in the devices discussed here, with drain current modulation of four to six orders of magnitude and a mobility of mu(h) approximate to 155 cm(2) V-1 s(-1) for hole conduction at room temperature. Magnetoresistance calculations using a spin diffusion model reveal that the source-drain contact resistances in the BP device can be tuned by gate voltage to an optimal range for injection and detection of spin-polarized holes. The results of the study demonstrate the prospect of BP nanolayers for efficient nanoelectronic and spintronic devices.
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