4.8 Article

Room-temperature quantum microwave emitters based on spin defects in silicon carbide

期刊

NATURE PHYSICS
卷 10, 期 2, 页码 157-162

出版社

NATURE PUBLISHING GROUP
DOI: 10.1038/NPHYS2826

关键词

-

资金

  1. Bavarian Ministry of Economic Affairs, Infrastructure, Transport and Technology, Germany
  2. Ministry of Education and Science, Russia [8017, 8568]
  3. RFBR [13-02-00821]

向作者/读者索取更多资源

Atomic-scale defects in silicon carbide are always present and usually limit the performance of this material in high-power electronics and radiofrequency communication. Here, we reveal a family of homotypic silicon vacancy defects in silicon carbide exhibiting attractive spin properties. In particular, the defect spins can be initialized and read out even at room temperature by means of optically detected magnetic resonance, suggesting appealing applications such as spin qubits and spin magnetometers. Using this technique we detect two-quantum spin resonances, providing strong evidence for the S = 3/2 ground state of the silicon vacancy defects. The optically induced population inversion of these high-spin ground states leads to stimulated microwave emission, which we directly observed in our silicon carbide crystals. The analysis based on the experimentally obtained parameters shows that this property can be used to implement solid-state masers and extraordinarily sensitive radiofrequency amplifiers.

作者

我是这篇论文的作者
点击您的名字以认领此论文并将其添加到您的个人资料中。

评论

主要评分

4.8
评分不足

次要评分

新颖性
-
重要性
-
科学严谨性
-
评价这篇论文

推荐

暂无数据
暂无数据