期刊
NATURE PHYSICS
卷 9, 期 10, 页码 661-666出版社
NATURE PUBLISHING GROUP
DOI: 10.1038/NPHYS2733
关键词
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资金
- US Department of Energy, Office of Basic Energy Sciences, Materials Sciences and Engineering Division [DE-AC02-76SF00515]
- Office of Science, Office of Basic Energy Sciences, US Department of Energy [DE-AC02-05CH11231]
- Stanford Synchrotron Radiation Lightsource
External control of the conductivity of correlated oxides is one of the most promising schemes for realizing energy-efficient electronic devices. Vanadium dioxide (VO2), an archetypal correlated oxide compound, undergoes a temperature-driven metal-insulator transition near room temperature with a concomitant change in crystal symmetry. Here, we show that the metal-insulator transition temperature of thin VO2(001) films can be changed continuously from similar to 285 to similar to 345 K by varying the thickness of the RuO2 buffer layer (resulting in different epitaxial strains). Using strain-, polarizationand temperature-dependent X-ray absorption spectroscopy, in combination with X-ray diffraction and electronic transport measurements, we demonstrate that the transition temperature and the structural distortion across the transition depend on the orbital occupancy in the metallic state. Our findings open up the possibility of controlling the conductivity in atomically thin VO2 layers by manipulating the orbital occupancy by, for example, heterostructural engineering.
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