Electrical control of a long-lived spin qubit in a Si/SiGe quantum dot

Nanofabricated quantum bits permit large-scale integration but usually suffer from short coherence times due to interactions with their solid-state environment(1). The outstanding challenge is to engineer the environment so that it minimally affects the qubit, but still allows qubit control and scalability. Here, we demonstrate a long-lived single-electron spin qubit in a Si/SiGe quantum dot with all-electrical two-axis control. The spin is driven by resonant microwave electric fields in a transverse magnetic field gradient from a local micromagnet(2), and the spin state is read out in the single-shot mode(3). Electron spin resonance occurs at two closely spaced frequencies, which we attribute to two valley states. Thanks to the weak hyperfine coupling in silicon, a Ramsey decay timescale of 1 mu s is observed, almost two orders of magnitude longer than the intrinsic timescales in GaAs quantum dots(4,5), whereas gate operation times are comparable to those reported in GaAs6-8. The spin echo decay time is similar to 40 mu s, both with one and four echo pulses, possibly limited by intervalley scattering. These advances strongly improve the prospects for quantum information processing based on quantum dots.